Abstract:Significant ferroelectricity in sub‐6 nm thin films is boosted by atomic layer engineering on the HfO2 seeding layer, triggering the morphotropic phase boundary effect correlated with the dramatic transition from antiferroelectric to ferroelectric phase in ZrO2. Furthermore, clear images of surface grains taken by helium ion microscopy are employed to characterize the transformation of crystallographic structures for the first time. Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB) between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 seeding layer with only 2 monolayers, the overlying ZrO2 layer experiences the dramatic phase transition across the MPB. Conspicuous ferroelectric properties including record‐high remanent polarization (2Pr ≈ 60 μC cm−2), wake‐up‐free operation, and high compatibility with advanced semiconductor technology nodes, are achieved in the sub‐6 nm thin film. The prominent antiferroelectric to ferroelectric phase transformation is ascribed to the in‐plane tensile stress introduced into ZrO2 by the HfO2 seeding layer. Based on the high‐resolution and high‐contrast images of surface grains extracted precisely by helium ion microscopy, the evolution of the MPB between tetragonal, orthorhombic, and monoclinic phases with grain size is demonstrated for the first time. The result indicates that a decrease in the average grain size drives the crystallization from the tetragonal to polar orthorhombic phases.

Atomic Visualization of the Emergence of Orthorhombic Phase in Hf0.5Zr0.5O2 Ferroelectric Film with In-Situ Rapid Thermal Annealing

In-situ Atomic Visualization of Structural Transformation in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film: from Nonpolar Tetragonal Phase to Polar Orthorhombic Phase

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

In-situ Atomic-Level Observation of Reversible First-Order Transition in Hf0.5 Zr0.5 O₂ Ferroelectric Film

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

Atomic-scale Characterization of Defects Generation During Fatigue in Ferroelectric Hf0.5Zr0.5O2 Films: Vacancy Generation and Lattice Dislocation

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Short-term and Long-Term T-O Phase Transition Responsible for Two Stages of Wake-Up Process in Ferroelectric Hf0.5Zr0.5O2 Film

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Visualizing Ferroelectric Uniformity of Hf1- xZr x O2 Films Using X-ray Mapping

Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation

Influence of Annealing Atmosphere on Polarization Behaviors of Hf0.5Zr0.5O2 Ferroelectric Films Deposited on Ti Electrodes

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Observing Ferroelastic Switching in Hf0.5Zr0.5O2 Thin Film

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology