Abstract:A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that the local structure deviates from the average structure in both ferroelectric and paraelectric phases. We show that the crystal possesses several, inequivalent complex domain boundaries which show no sign of instability even 200 K above the ferroelectric-to-paraelectric phase transition temperature TC. Two types of boundaries are addressed. The first boundary was formed between ferroelectric domains below TC. This boundary remained stable up to the highest measurement temperatures, and stabilized the domains so that they had the same orientation after repeated heating and cooling cycles. These domains transformed normally to the cubic paraelectric phase. Another type of boundary was formed at 673 K and exhibited no signs of instability up to 923 K. The boundary formation was reversible: it formed and vanished between 573 and 673 K during heating and cooling, respectively. A model in which the crystal is divided into thin slices with different Zr/Ti ratios is proposed. The physical mechanism behind the thermal-stress-induced structural changes is related to the different thermal expansion of the slices, which forces the domain to grow similarly after each heating and cooling cycle. The results are interesting for non-volatile memory development, as it implies that the original ferroelectric state can be restored after the material has been transformed to the paraelectric phase. It also suggests that a low-symmetry structure, stable up to high-temperatures, can be prepared through controlled deposition of layers with desired compositions.

In-situ Atomic Visualization of Structural Transformation in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film: from Nonpolar Tetragonal Phase to Polar Orthorhombic Phase

In-situ Atomic-Level Observation of Reversible First-Order Transition in Hf0.5 Zr0.5 O₂ Ferroelectric Film

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Atomic Visualization of the Emergence of Orthorhombic Phase in Hf0.5Zr0.5O2 Ferroelectric Film with In-Situ Rapid Thermal Annealing

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Atomic-scale Characterization of Defects Generation During Fatigue in Ferroelectric Hf0.5Zr0.5O2 Films: Vacancy Generation and Lattice Dislocation

Observing Ferroelastic Switching in Hf0.5Zr0.5O2 Thin Film

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Microstructure Research For Ferroelectric Origin In The Strained Hf0.5zr0.5o2 Thin Film Via Geometric Phase Analysis

Electric-field-induced Crystallization of Hf0.5Zr0.5O2 Thin Film Based on Phase-Field Modeling

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Optimal Parameter-Space for Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin-Films under Strain and Electric Fields

Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Electric-field-induced crystallization of Hf 0.5 Zr 0.5 O 2 thin film based on phase-field modeling

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films