Abstract:In this work, synchrotron X‐ray diffraction, capacitance‐voltage measurements, and piezoresponse force microscopy imaging are used to examine the polarization wake‐up phenomenon that exists in ferroelectric capacitors with Hf0.5Zr0.5O2 (HZO) thin films. These measurements strongly demonstrate that polarization wake‐up results from a field‐induced phase change in the HZO films from an initially‐present tetragonal phase to the ferroelectric orthorhombic phase. As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO2‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as "wake‐up". In this study, the authors attempt to understand what causes the wake‐up effect in Hf0.5Zr0.5O2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

Short-term and Long-Term T-O Phase Transition Responsible for Two Stages of Wake-Up Process in Ferroelectric Hf0.5Zr0.5O2 Film

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

In-situ Atomic-Level Observation of Reversible First-Order Transition in Hf0.5 Zr0.5 O₂ Ferroelectric Film

Atomic Visualization of the Emergence of Orthorhombic Phase in Hf0.5Zr0.5O2 Ferroelectric Film with In-Situ Rapid Thermal Annealing

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

In-situ Atomic Visualization of Structural Transformation in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film: from Nonpolar Tetragonal Phase to Polar Orthorhombic Phase

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO 2

Observing Ferroelastic Switching in Hf0.5Zr0.5O2 Thin Film

Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Correlation of Wake-Up Effect in Hf1-xZrxO2 Ferroelectrics with Antiferroelectric Properties

Defect engineering for control of wake-up effect in HfO2-based ferroelectrics

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$: Interfacial Layer Soft Breakdown and Physical Modeling