Abstract:Group II-VI quantum dots (QDs) possess tunable electrical and optical properties that make them very attractive for high-tech applications and power generation. The effects of proton irradiation on both the structural and physical properties of "giant" CdSe/CdS core-shell QDs (g-CS QDs) are investigated. These experiments shed light on photoelectron delocalization in g-CS QDs, where current linkages and strong variations in optical emission result from the spatial extension of the photoelectron wavefunctions over the conduction bands of CdSe and CdS. Monte Carlo simulations of ion-matter interactions show that the damaging rates can be set from the energy of impinging protons to promote the formation of structural defects in the core or shell. The formation of nanocavities is demonstrated after irradiation doses higher than approximate to 10(17) H+ cm(-2), while a continuous decrease in luminescence intensity is observed for increasing proton fluencies. This feature is accompanied by a concomitant lifetime decrease marking the rise of nonradiative phenomena and the occurrence of greater photocarrier transfers between CdS and CdSe. Current-to-voltage characterizations evidence that proton implantation can be implemented to enhance the photocurrent generation in g-CS QDs. This increase is attributed to the delocalization of photoelectrons in the CdS shell, whose improvement is found to promote electron-hole pair separation.

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

Impact of Proton-Induced Alteration of Carrier Lifetime on Single-Event Transient in SiGe Heterojunction Bipolar Transistor

Proton-induced Current Transient in SiGe HBT and Charge Collection Model Based on Monte Carlo Simulation

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Impact of Layout and Profile Optimization for Inverse-Mode SiGe HBT on SET and TID Responses

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

Impact of Displacement Damage on Single Event Transient Charge Collection in SiGe HBTs

Bias Dependence of Synergistic Radiation Effects Induced by Electrons and Protons on Silicon Bipolar Junction Transistors

A Single-Event Transient Induced by a Pulsed Laser in a Silicon—germanium Heterojunction Bipolar Transistor

Enhanced Photocurrent Generation In Proton-Irradiated "Giant" Cdse/Cds Core/Shell Quantum Dots

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor

Key Factors of Laser-Induced Single Event Transients on Different SiGe Process

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET