Abstract:The single event effect (SEE) sensitivity of silicon–germanium heterojunction bipolar transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the protons pass through the larger collector-substrate (CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons. To further evaluate the tolerance of the device, the influence of proton on SiGe HBT after gamma-ray (60Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Proton-induced Current Transient in SiGe HBT and Charge Collection Model Based on Monte Carlo Simulation

Impact of Proton-Induced Alteration of Carrier Lifetime on Single-Event Transient in SiGe Heterojunction Bipolar Transistor

Simulation of Substrate Contact Effects on Heavy Ion-Induced Current Transient in SiGe HBT

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Impact of Displacement Damage on Single Event Transient Charge Collection in SiGe HBTs

Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

Numerical Simulation of SiGe HBT Irradiated by 1mev Neutron Beam

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT

3-D Simulation Study of Single Event Effects of SiGe Heterojunction Bipolar Transistor in Extreme Environment

3-D Simulation of Charge Collection in Double-Gate MOSFET under Low-Energy Proton Irradiation

Three-Dimensional Simulation of Fabrication Process-Dependent Effects on Single Event Effects of Sige Heterojunction Bipolar Transistor

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

Experimental Characterization of Proton Radiated SiGe Power HBTs at Extreme Temperatures.

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment