Abstract:The effect of bias condition on total ionizing dose (TID) of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated, cutoff, and all-grounded biases during 60Coγ irradiation. After each irradiation stops, the forward Gummel characteristic and inverse Gummel characteristic are measured, and a 3-D simulation of TID for SiGe HBT is performed. The mechanism of TID in different bias conditions is obtained by analyzing normalized excess base current. The results show that the TID damages are different at various irradiation biases of the SiGe HBT, and the worst bias between forward and inverse Gummel characteristics exhibits inconsistently. The reason could be attributed to different defects produced and accumulated in oxide layers by irradiation at various bias conditions. To be specific, the oxide trap charges (Not) in emitter/base (E/B) Spacer is important to the forward Gummel characteristic, yet the Not in LOCOS determines the inverse Gummel characteristic. However, after long time irradiation, the interface states (Nit) both in E/B Spacer and LOCOS dominate the damage to the SiGe HBT despite in forward Gummel mode or inverse Gummel mode.

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

An Investigation of ELDRS in Different SiGe Processes

Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Key Factors of Laser-Induced Single Event Transients on Different SiGe Process

The reliability of SiGe HBT under swift heavy ion irradiation

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases

Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor

Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{co}}\gamma $ in SiGe HBT

Irradiation Effects on DC Current Gain of SiGe HBT

3-D Simulation Study of Single Event Effects of SiGe Heterojunction Bipolar Transistor in Extreme Environment

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor