Abstract:We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

3-D Simulation Study of Single Event Effects of SiGe Heterojunction Bipolar Transistor in Extreme Environment

The reliability of SiGe HBT under swift heavy ion irradiation

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Impact of Proton-Induced Alteration of Carrier Lifetime on Single-Event Transient in SiGe Heterojunction Bipolar Transistor

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Experimental Characterization of Proton Radiated SiGe Power HBTs at Extreme Temperatures.

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Key Factors of Laser-Induced Single Event Transients on Different SiGe Process

Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors

Dlts Studies of Bias Dependence of Defects in Silicon Npn Bipolar Junction Transistor Irradiated by Heavy Ions

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor