Abstract:The single event effect (SEE) sensitivity of silicon–germanium heterojunction bipolar transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the protons pass through the larger collector-substrate (CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons. To further evaluate the tolerance of the device, the influence of proton on SiGe HBT after gamma-ray (60Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Impact of Proton-Induced Alteration of Carrier Lifetime on Single-Event Transient in SiGe Heterojunction Bipolar Transistor

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Proton-induced Current Transient in SiGe HBT and Charge Collection Model Based on Monte Carlo Simulation

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Impact of Displacement Damage on Single Event Transient Charge Collection in SiGe HBTs

Simulation of Substrate Contact Effects on Heavy Ion-Induced Current Transient in SiGe HBT

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

3-D Simulation Study of Single Event Effects of SiGe Heterojunction Bipolar Transistor in Extreme Environment

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Investigation of total dose effects in SiGe HBTs under different exposure conditions

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

A Single-Event Transient Induced by a Pulsed Laser in a Silicon—germanium Heterojunction Bipolar Transistor

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor