Abstract:In this paper, based on the sequential irradiation of 40 MeV Si ions and Co-60 gamma ray, a direct evidence of the annealing effect of ionization damage on displacement damage in 2N2219 NPN bipolar junction transistors (BJTs) is investigated. Electrical parameters are measured using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation induced defects are characterized by deep level transient spectroscopy (DLTS). The experimental results show that the degradation of current gain for the F2N2219 BJTs for the sum of the independent Co-60 gamma radiation and heavy ion irradiation is larger than that for the sequential irradiations, indicating the existence of significant synergistic effect. For lower fluence of 40 MeV Si ions, when the dose of Co-60 gamma ray is lower, the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. When fluence of 40 MeV Si ions is more than 6×l08/cm2, all the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. These results show that ionization damage on the transistors caused by the subsequent Co-60 gamma ray has an annealing effect on displacement damage caused by the 40 MeV Si ions. DLTS analyses show that the displacement defects especially in V2(-/0) centers caused by the 40 MeV Si ions are annealed due to the oxide charges induced by Co-60 gamma ray irradiations. Moreover, the fluence of the independent 40 MeV Si ions is the larger, the annealing effect of the displacement defects is the more obvious.

Impact of Displacement Damage on Single Event Transient Charge Collection in SiGe HBTs

Impact of Proton-Induced Alteration of Carrier Lifetime on Single-Event Transient in SiGe Heterojunction Bipolar Transistor

Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors

Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit

Simulation of Substrate Contact Effects on Heavy Ion-Induced Current Transient in SiGe HBT

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Analysis of Displacement Damage Effects on Bipolar Transistors Irradiated by Spallation Neutrons

Proton-induced Current Transient in SiGe HBT and Charge Collection Model Based on Monte Carlo Simulation

Transient dose rate effects in silicon-germanium heterojunction bipolar transistors

Experimental study of pulse neutron irradiation damage in SiGe HBT

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

A Single-Event Transient Induced by a Pulsed Laser in a Silicon—germanium Heterojunction Bipolar Transistor

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

The reliability of SiGe HBT under swift heavy ion irradiation

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation