Abstract:In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer characteristic curves, it was found that the carrier mobility was reduced after proton irradiation. The analysis suggests that proton irradiation generates a large net positive charge in the gate oxide layer, which induces a negative drift in the Dirac voltage. Introducing defects and increased impurities at the gate oxide/graphene interface after proton irradiation resulted in enhanced Coulomb scattering and reduced mobility of the carriers, which in turn affects the Dirac sheet resistance and saturation current. After annealing at room temperature, the electrical characteristics of the devices were partially restored. The results of the technical computer-aided design (TCAD) simulation indicate that the reduction in carrier mobility is the main reason for the degradation of the electrical performance of the device. Monte Carlo simulations were conducted to determine the ionization and nonionization energy losses induced by proton incidence in top-gate GFET devices. The simulation data show that the ionization energy loss is the primary cause of the degradation of the electrical performance.

3-D Simulation of Charge Collection in Double-Gate MOSFET under Low-Energy Proton Irradiation

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Effect of heavy ion irradiation on the RF performance of 0.18μm bulk Si MOSFETs

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

Charge Deposition Model for Investigating Se-Microdose Effect in Trench Power Mosfets