Abstract:A comparison of laser-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistor (SiGe HBT) variants designed for high-speed (HS) applications and high-breakdown (HB) applications is presented. A significantly lower amplitude SET response at low laser pulse energies was observed in the HS device compared to the HB device. At high laser pulse energies, however, the transient amplitudes converged and produced a nearly identical response. A 3-D technology computer-aided design (TCAD) model of a SiGe HBT was used to understand the differences between the observed SET responses. During an SET produced by a low laser pulse energy, the mean electric field in the collector-base (CB) junction of a simulated HB device is shown to have a greater magnitude across the depletion region compared to that of its HS counterpart. Motivated by the proportional relationship between drift current and CB junction electric field, a greater breakdown voltage device produced a larger SET response. During an SET produced by a high laser pulse energy, the charge from the SET exceeded the collector doping in both the HS and HB SiGe HBT. This creates a conductive path to the output terminal, removing the dependence of collector doping on SET amplitude. The results of this study should help inform design choices of which device breakdown variant should be used in a given circuit if SETs are a major consideration for the application.

Impact of Layout and Profile Optimization for Inverse-Mode SiGe HBT on SET and TID Responses

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors

Development on Si/SiGe heterojunction bipolar transistors

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Hierarchical layout design of power SiGe HBTs

TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-Nm Nmosfets: Concerns on the Layout-Dependent Effects

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Effect of channel doping profiles on performance of germanium-on-insulator based junctionless transistors