Abstract:Abstract Tunnel field-effect transistors (TFETs) are strong candidates for ‘Internet of Things’ electronic devices, due to their ultra-low power consumption. In this work, we propose a novel nanoscale silicon-on-insulator double-gate ferroelectric tunneling field-effect transistor (SOI DG-FeTFET), and single-event-transient (SET) effects are investigated by means of two-dimensional technology computer-aided design simulations. In addition, we perform systematic analysis and comparison with a silicon-on-insulator double-gate ferroelectric field-effect transistor (SOI DG-FeET) . The simulation results show that the peak value of the drain transient current achieved by our DG-FeTFET is up to 2.72 × 10 –4 A at 10 MeV·cm 2 mg −1 , which is much higher than the on-state current ( I on ) ∼ 7.63 × 10 −5 A at V d = 0.5 V. Moreover, our results show that the DG-FeTFET is more susceptible to SET effects than FeFET. The results also show that the bipolar amplification effect can be neglected, and that the drift-diffusion mechanism is dominant in the carrier collection process in the DG-FeTFET. The transient responses of the single event effect are also strongly correlated with the strike location of heavy ions, with the most sensitive part being close to the area where interband tunneling occurs and the electric field is the strongest. These analyses may prove relevant for applications SOI DG-FeTFETs/FeFETs in environments where radiation is present.

Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Single-event-transient Effect in Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron–hole Bilayer

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Impact of TID on Latch Up Induced by Pulsed Irradiation in CMOS Circuits

Incorporation of total ionizing dose effects into a compact model for p-GaN gate high electron mobility transistors

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Anomalous TID Susceptibility on Collector Bias for SOI High-Voltage Polysilicon Emitter Bipolar Transistors

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices