Abstract:Thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have become essential building blocks for a broad range of electronics, since TAOSs facilitate large‐scale fabrication at moderate temperatures and hence feature compatibility with flexible substrates. An emerging indium‐free alternative to the widely commercially exploited indium gallium zinc oxide (IGZO) is amorphous zinc tin oxide (ZTO); however, according to previous reports, achieving acceptable performance of ZTO‐based devices fabricated at temperatures below 300 °C is still challenging to date. Here, key properties of the first all‐oxide and fully transparent metal‐semiconductor field‐effect transistors (MESFETs), metal‐insulator‐semiconductor field‐effect transistors (MISFETs) and junction field‐effect transistors (JFETs) based on amorphous ZTO are compared, employing PtOx, HfOy, and p‐type NiO as gate, respectively. All individual layers have been deposited exclusively at room temperature and do not require any additional postdeposition annealing to obtain sufficient device functionality. Demonstrated TFTs exhibit reasonable current on/off ratios of over six orders of magnitude with subthreshold swings as low as 61 mV dec–1 at room temperature. Transistor characteristics have been recorded for several weeks to study performance consistency over time and are further investigated regarding their stability under bias stress.

P‐1.2: All‐Oxide Thin‐Film Transistors for Low‐Voltage‐Operation Circuits

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

One-volt oxide based complementary circuit

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

The Implementation of Fundamental Digital Circuits with ITO-Stabilized ZnO TFTs for Transparent Electronics

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Printed organic transistors and complementary ring oscillators operatable at 200 mV

Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors

Vertical oxide thin-film transistor with interfacial oxidation

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Amorphous IZO-based transparent thin film transistors

Beol Compatible 15-Nm Channel Length Ultrathin Indium-Tin-Oxide Transistors With I-On=970 Mu A/Mu M And On/Off Ratio Near 10(11) At V-Ds=0.5 V