Abstract:This work includes a precise study of the mechanism of how in situ atomic layer deposition (ALD)‐stacked Al2O3 and SnO channel thin‐film transistors exhibit exceptionally low S‐value (0.15 V decade−1) and enhanced stability, which are related to the change occurring in the film. Also, using this improved p‐channel, an all‐ALD channel complementary metal–oxide–semiconductor, which has not been reported before, is fabricated. Tin monoxide (SnO) has been studied widely over the past several decades due to its promising theoretical p‐type performance. However, limited fabrication processes due to the low thermal and air stability of SnO have resulted in poor performance in thin‐film transistors (TFTs). Here, it is suggested that in situ atomic layer deposition (ALD) of an Al2O3 capping layer can improve the electrical performance in SnO TFTs. By adopting an in situ stacking process, which protects vulnerable SnO thin films from exposure to air and contamination, SnO exhibits enhanced crystallinity, electrical performance, and improved scaling limitation of channel thickness. Especially, in situ stacked Al2O3 on a 7 nm SnO TFT has an exceptionally low subthreshold swing (0.15 V decade−1), high on/off ratio (6.54 × 105), and reasonable mobility (1.14 cm2 V−1 s−1) while the bare SnO TFT is not activated. Computational thermodynamics such as chemical potential analysis, nucleation Gibbs free‐energy calculations, and various analytical techniques are used to reveal the origin of highly crystallized SnO formations via in situ deposition of Al2O3. Finally, state‐of‐the‐art all‐ALD‐channel complementary metal–oxide–semiconductor inverters using n‐type indium gallium zinc oxide and p‐type SnO TFTs are integrated, which exhibit a maximum voltage gain of 240 V V−1 and a noise margin of 89.3%.

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Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors

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The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications

Printed organic transistors and complementary ring oscillators operatable at 200 mV

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

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Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter

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Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature