Abstract:Figure 2 presents the XRD (X‐ray Diffraction) plots of the as‐synthesized samples sintered at 1150 °C with varied amounts of ZnSb2O6. The XRD diagram of the sample doped with 0.0% and 1.0% ZnSb2O6 displays the weak Zn7Sb2O12 spinel peaks.With an increase in ZnSb2O6 additive content from 3% to 7 mol%, the peaks of Zn7Sb2O12 considerably strengthen. The present investigation reports the variations of the microstructure and electrical properties due to a change in the ZnSb2O6 content of ZnO varistors. The impact of the ZnSb2O6 additive on both microstructure and electrical properties in ZnO varistors is studied via the X‐ray diffraction (XRD) and an impedance analyzer. Zn7Sb2O12 spinel phase and single hexagonal ZnO phase are detected in ZnO varistors with the addition of ZnSb2O6. The ZnO varistors with 5 mol% ZnSb2O6 have the highest nonlinear coefficient (43.2) and the lowest leakage current density (3.96 A cm−2). The resistivity of grain boundary ρgb increases continuously with the increasing content of ZnSb2O6 as demonstrated by impedance measurements. Additionally, low values of dielectric loss at high frequencies suggest a ZnO varistor doped with ZnSb2O6 is suitable for high frequency device applications.

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