Effect of SnO2 Doping on Microstructural and Electrical Properties of ZnO–Pr6O11 Based Varistor Ceramics

Hai Feng,Zhijian Peng,Xiuli Fu,Zhiqiang Fu,Chengbiao Wang,Longhao Qi,Hezhuo Miao

DOI: https://doi.org/10.1016/j.jallcom.2011.04.042

IF: 6.2

2011-01-01

Journal of Alloys and Compounds

Abstract:ZnO-Pr6O11 based varistor ceramics doped with 0-2.0 mol% SnO2 were fabricated by sintering samples at 1300 degrees C for 2 h with conventional ceramic processing method. X-ray diffraction analysis indicated that the doped SnO2 reacted with praseodymium oxides during sintering, generating Pr2Sn2O7 phase. Through scanning electron microscopy, it was found that the doping of SnO2 played a role against the growth of ZnO grains. Capacitance-voltage analysis revealed that the doped SnO2 acted as a donor in the varistor. The measured electric-field/current-density characteristics of the samples showed that the varistor voltage increased with the increase of SnO2 doping content, when the SnO2 content was no more than 1.0 mol%; with the SnO2 content up to no more than 0.5 mol%, the doping of SnO2 could increase the nonlinear coefficient; but, when the SnO2 doping content was further increased, the nonlinear coefficient and varistor voltage of the samples decreased, and the leakage current increased. (C) 2011 Elsevier B. V. All rights reserved.