Influence of Yb 2 O 3 doping on microstructural and electrical properties of ZnO-Bi 2 O 3 -based varistor ceramics

Dong Xu,Dong-mei Tang,Yuan-hua Lin,Lei Jiao,Guo-ping Zhao,Xiao-nong Cheng
DOI: https://doi.org/10.1007/s11771-012-1167-2
2012-01-01
Journal of Central South University
Abstract:ZnO-Bi 2 O 3 -based varistor ceramics doped with Yb 2 O 3 in the range from 0 to 0.4% (molar fraction) were obtained by a solid reaction route. The X-ray diffractometry (XRD) and scanning electron microscopy (SEM) were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V–I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi 2 O 3 phase, Zn 7 Sb 2 O 12 -type spinel phase and Zn 2 Bi 3 Sb 3 O 14 -type pyrochlore are present, and the Yb 2 O 3 phases and Sb 2 O 4 phases are found in varistor ceramics with increasing amounts of Yb 2 O 3 . The average size of ZnO grain firstly increases and then decreases with the increase of Yb 2 O 3 content. The result also shows that the threshold voltage is between 656 V/mm and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1–22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb 2 O 3 -added ZnO-Bi 2 O 3 -based varistor ceramics sintered at 900 °C have the best electrical characteristics.
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