B2O3- and Y2O3-doped ZnO Varistor Ceramics: Enhanced Voltage Gradient and Nonlinear Properties for UHV

Kuan Cheng,Hongfeng Zhao,Yuanxiang Zhou,Qingyun Xie
DOI: https://doi.org/10.1016/j.mssp.2020.105590
IF: 4.1
2021-01-01
Materials Science in Semiconductor Processing
Abstract:In this paper, the effects of boron and yttrium co-doping on the electrical properties of ZnO varistors were determined. The presence of both B3+ and Y3+ co-dopant improved the electrical performance of varistor ceramics. The nonlinearity coefficient alpha and potential barrier phi(b) were increased noticeably. The nonlinearity coefficient alpha was 73 and phi(b) was 2.75 eV, at the same time, a voltage gradient of 425 V/mm and leakage current of 0.9 mu A/cm(2) were obtained. This work provided a way to enhance the protective effects of ZnO varistor arresters for ultra-high voltage power transmission systems.
What problem does this paper attempt to address?