Abstract:In this work, equal amount (0.6 mol.%) of Nb 2 O 5 and Tm 2 O 3 was respectively designed as donor and acceptor dopants, 0.3 mol.% SiO 2 was added as sintering aid in order to improve the comprehensive properties of TiO 2 -based ceramics and the sintering temperature of varistor ceramics was optimized. It was found that the varistor sintered at 1350 °C possessed the best integrated electrical properties with the breakdown voltage ( E b ) of 3.04 V/mm, the nonlinear coefficient ( α ) of 4.75, the giant dielectric constant ( ε r ) of 1.4 × 10 5 and the dielectric loss (tanδ) of 0.29, which was derived from synthetic effect of grain size, the highest density and grain boundary characteristics. Partial Tm 3+ dissolved in the TiO 2 lattice led to lattice distortion, while the others aggregated on the grain boundary to form Tm 2 Ti 2 O 7 . Meanwhile, the effects of Bi 2 O 3 co-doping on the properties and microstructure of TiO 2 varistors were discussed, indicating that the varistor co-doped with 0.5 mol.% of Bi 2 O 3 and 0.1 mol.% of Tm 2 O 3 exhibited a higher nonlinear coefficient ( α = 6), but deteriorated the dielectric properties. The secondary phase changed from Tm 2 Ti 2 O 7 to Bi 2 Ti 2 O 7, and the liquid phase sintering promoted the mass transfer and the grain growth when the Bi 2 O 3 doping amount exceeded 0.2 mol.%.

ZnO-Pr<sub>6</sub>O<sub>11</sub>-Co<sub>3</sub>O<sub>4</sub>-TiO<sub>2</sub>-Based Ceramic Varistor Materials

B<sub>2</sub>O<sub>3</sub>-Doped ZnO-Pr<sub>6</sub>O<sub>11</sub> Based Varistor Ceramics

B 2O 3-doped ZnO-Pr 6O 11 based varistor ceramics

Influence of Fe2O3 Doping on Microstructural and Electrical Properties of ZnO–Pr6O11 Based Varistor Ceramic Materials

Effect of SnO2 Doping on Microstructural and Electrical Properties of ZnO–Pr6O11 Based Varistor Ceramics

Optimization of Sintering Temperature and Doping Level of Cr2O3 in ZnO-Pr6O11-Based Varistor Ceramics

Densification and Surge Current Performance of SnO_2-Sb_2O_3 Based Varistor Ceramics

Influence of SnO2 on ZnO–Bi2O3–Co2O3 Based Varistor Ceramics

Effects of Tm2O3 and Bi2O3 Co-Doped with Equal Content of Nb2O5 on the Properties of TiO2-Based Varistor Ceramics

Microstructure and Electrical Properties of ZnO-Pr<sub>6</sub>O<sub>11</sub>-Dy<sub>2</sub>O<sub>3</sub>-Based Varistor Ceramics Doped with La<sub>2</sub>O<sub>3</sub>

Microstructure and Electrical Properties of ZnO-Pr6O11-Dy2O3-Based Varistor Ceramics Doped with La2O3

Effect of SnO2 doping on the performance of TiO2-based varistor

Effect of Dy-doping or Nd-doping on the structure and properties of (Sr, Ba, Ca) TiO3-based varistor ceramics

INFLUENCE OF Fe_2O_3 DOPING ON THE ELECTRICAL PROPERTIES OF ZnO-Pr_6O_(11) BASED VARISTOR MATERIALS

Effect of La<sub>2</sub>O<sub>3</sub> and CeO<sub>2</sub> on Nb<sub>2</sub>O<sub>5</sub> Doped TiO<sub>2</sub> Ceramic Varistors

Effect of Li+ and Mn2+ doping on the electrical properties of SrTiO3-based varistor ceramics

Effect of Ta2O5 in (ca, Si, Ta)-doped TiO2 Ceramic Varistors

Influence of Y2O3 on Electrical Properties and Dielectric Characteristics in ZnO Based Varistor Ceramics

Microstructure and Electrical Properties of ZrO2-doped ZnO Varistor Ceramics

ZnO-Pr&lt;sub&gt;6&lt;/sub&gt;O&lt;sub&gt;11&lt;/sub&gt;-Co&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt;-TiO&lt;sub&gt;2&lt;/sub&gt;-Based Ceramic Varistor Materials

B&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;-Doped ZnO-Pr&lt;sub&gt;6&lt;/sub&gt;O&lt;sub&gt;11&lt;/sub&gt; Based Varistor Ceramics