Ge-doping in TiO2-Nb2O5-CaCO3 Varistor Ceramics: Structure and Property
Kang Kunyong,Xu Kai-Meng,Liu Can,Yang Xiao-Qing,Zheng Zhifeng
DOI: https://doi.org/10.15541/jim20170237
IF: 1.292
2018-01-01
Journal of Inorganic Materials
Abstract:TiO2 varistors are typical electronic devices with nonlinear current voltage property fabricated from TiO2 ceramics. This study investigated the influence of Ge doping on the nonlinear coefficient alpha and the breakdown electric field E-B of TiO2-Nb2O5-CaCO3 varistor ceramics. TiO2-Nb2O5-CaCO3 varistor ceramics doped with Ge were successfully prepared by using traditional method of ball milling-molding-sintering. The electrical performance, including nonlinear coefficient alpha, breakdown electric field E-B , and leakage current J(L) , was tested with a varistor-direct current-parameter instrument. Average barrier height phi(B) of each sample was calculated by relevant formula. Analysis of X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and scanning transmission electronic microscopy demonstrated that Ge doping notably changed the microstructure of TiO2-Nb2O5-CaCO3 ceramics, thereby increasing alpha and decreasing E-B. When Nb2O5 and CaCO3 doping content were 0.5mol%, the TiO2-Nb2O5-CaCO3 varistor ceramics doping with 1.0 mol% Ge exhibited high alpha (10.6), low E-B (8.7 V/mm), and highest phi(B) (1.73 eV), superior to previous published findings. Furthermore, Ge with low melting point as sintering aid could reduce the sintering temperature of the varistor ceramics, with optimal sintering temperature at 1300 degrees C.