Abstract:To investigate the relationship between the electrical properties of Y-Al doped ZnO varistors and sintering temperature, in this study, we measured the voltage-current characteristics and electrical performance parameters of samples sintered at 1100 degrees C$1100<^>\circ \text{C}$-1300 degrees C$1300<^>\circ \text{C}$. Scanning electron microscopy observations revealed that as the sintering temperature increased, the grain size grew significantly, leading to a reduction in voltage gradient. Through C--V$C\text{--}V$ characteristic testing, X-ray diffraction and energy dispersive X-ray spectroscopy analysis, it was found that the increase in sintering temperature promoted the formation of interface negative charge and defect reactions by Y3+${\rm Y}<^>{3+}$, increasing Ni$N_{\text{i}}$ and Nd$N_{\text{d}}$; Al3+${\rm Al}<^>{3+}$ tends to aggregate in the grain area, further increasing Nd$N_{\text{d}}$; the volatilization of Bi3+${\rm Bi}<^>{3+}$ gradually increases, causing a decrease in Ni$N_{\text{i}}$; the Phi b$\Phi _{\text{b}}$ first increases and then decreases with the changes in Ni$N_{\text{i}}$ and Nd$N_{\text{d}}$, resulting in a U-shaped variation characteristic of the nonlinear coefficient and leakage current density. At a sintering temperature of 1200 degrees C$1200<^>\circ \text{C}$, the performance of ZnO varistors is optimal.

Admittance Spectroscopy of Y<sub>2</sub>O<sub>3</sub>-Doped ZnO Varistors Sintered at Different Temperature

Effect of the Sintering Temperature on the Electrical Properties of Y-Al-doped ZnO Varistors

Influence of Y2O3 on Electrical Properties and Dielectric Characteristics in ZnO Based Varistor Ceramics

Residual Voltage Properties of ZnO Varistors Doped with Y2O3 for High Voltage Gradient

The Dependence of Sintering Temperature on Schottky Barrier and Bulk Electron Traps of ZnO Varistors

Preparation of Ultrahigh Potential Gradient of ZnO Varistors by Rare-Earth Doping and Low-Temperature Sintering

Low Temperature Sintering of Doped ZnO-V2O5 Varistors

Temperature Dependences of Leakage Currents of ZnO Varistors Doped with Rare‐Earth Oxides

Optimization of Sintering Temperature and Doping Level of Cr2O3 in ZnO-Pr6O11-Based Varistor Ceramics

Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics

Comprehensive Performances of ZnO Varistors Tailored by Multi-elements Doping

High Potential Gradient of Zno Varistors Prepared by Y2o3-Doping and Low-Temperature Sintering

Microstructure and Electrical Properties of Y(NO3)3·6H2O-doped ZnO–Bi2O3-based Varistor Ceramics

Influence of Dopants on Electrical Properties of ZnO-V 2 O 5 Varistors Deduced from AC Impedance and Variable-Temperature Dielectric Spectroscopy

Microstructure and electrical properties of Pr 6 O 11 doped ZnO-Bi 2 O 3 -based varistors

Sintering Temperature Dependence of Grain Boundary Resistivity in a Rare‐Earth‐Doped ZnO Varistor

Study on the electrical properties and defect structures of a high voltage gradient ZnO varistor

Low-temperature sintering of high voltage gradient ZnO-based thick film varistors

High Voltage Gradient ZnO Nonlinear Resistor Doped with Rare-Earth Oxide

Saturation Effect of Al(NO<sub>3</sub>)<sub>3</sub> Dopant on Residual Voltages of ZnO Based Varistor Ceramics

Admittance Spectroscopy of Y&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;-Doped ZnO Varistors Sintered at Different Temperature