Abstract:Monolayer Ge 2 Sb 2 Te 5 exhibits great potential in non-volatile memory technology due to its excellent electronic properties and phase-change characteristics, while the fundamental nature of Ge 2 Sb 2 Te 5 -metal contacts has not been well understood yet. Here, we provide a comprehensive ab initio study of the electronic properties between monolayer Ge 2 Sb 2 Te 5 and Pt, Pd, Au, Cu, Cr, Ag, and W contacts based on first-principles calculations. We find that the strong interaction interfaces formed between monolayer Ge 2 Sb 2 Te 5 and Pt, Pd, Cr, and W contacts show chemical bonding and strong charge transfer. In contrast, no apparent chemical bonding and weak charge transfer are observed in the weak interaction interfaces formed with Au, Cu, and Ag. Additionally, our study reveals the presence of a pronounced Fermi level pinning effect between monolayer Ge 2 Sb 2 Te 5 and metals, with pinning factors of S n =0.325 and S p =0.350. By increasing the interlayer distance, an effective transition from n-type Ohmic contact to n-type Schottky contact is facilitated because the band edge of Ge 2 Sb 2 Te 5 is shifted upwards. Our study not only provides a theoretical basis for selecting suitable metal electrodes in Ge 2 Sb 2 Te 5 -based devices but also holds significant implications for understanding Schottky barrier height modulation between semiconductors and metals.

Photoemission Study of Energy Band Alignment of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> and Common CMOS Materials

Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials

Band Alignment Between Amorphous Ge2Sb2Te5 and Prevalent Complementary-Metal-oxide-semiconductor Materials

Band Alignment Between Gete and Sio2/Metals for Characterization of Junctions in Nonvolatile Resistance Change Elements

Energy Band Alignment of PbTe/CdTe(111) Interface Determined by Ultraviolet Photoelectron Spectra Using Synchrotron Radiation

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy

Band Alignment at the Interface of Pbte/Snte Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Band Offsets Between Sio2 And Phase Change Materials In The (Gete)(X)(Sb2te3)(1-X) Pseudobinary System

Tetrahedral Amorphous Carbon-Silicon Heterojunction Band Energy Offsets

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Dependence of Energy Band Offsets at Ge2sb2te5/Sio2 Interface on Nitrogen Concentration

Determination of Band Alignment at the CdTe/SnTe Heterojunction Interface for CdTe Thin-Film Solar Cells

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

In-Situ SRPES Study on the Band Alignment of (0001)cds/cdte Heterojunction

Photocurrent Absorption Spectroscopic Study of Si0.6ge0.4/Si Quantum Wells

Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces