Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

Band Alignment Between Gete and Sio2/Metals for Characterization of Junctions in Nonvolatile Resistance Change Elements

Band Alignment Between Amorphous Ge2Sb2Te5 and Prevalent Complementary-Metal-oxide-semiconductor Materials

Band Offsets Between Sio2 And Phase Change Materials In The (Gete)(X)(Sb2te3)(1-X) Pseudobinary System

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

Photoemission Study of Energy Band Alignment of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> and Common CMOS Materials

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

From Stoichiometric to Off-stoichiometric GeTe: Phase Diagram Reconstruction and Thermoelectric Performance Reassessment

Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy

Fermi-level Pinning and Charge Neutrality Level in Nitrogen-Doped Ge2Sb2Te5: Characterization and Application in Phase Change Memory Devices

Band Alignment at the Interface of Pbte/Snte Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Fermi-Level Pinning at the Interface Between Metals and Nitrogen-Doped Ge2sb2te5 Examined by X-Ray Photoelectron Spectroscopy

Electron Beam Evaporation Deposition and Properties of Abrupt GST/Si Heterojunction Structure

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

Effect of Metals and Annealing on Specific Contact Resistivity of GeTe/metal Contacts

Achieving High Thermoelectric Performance by NaSbTe 2 Alloying in GeTe for Simultaneous Suppression of Ge Vacancies and Band Tailoring

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

The local structural differences in amorphous Ge-Sb-Te alloys

Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe