Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials

Photoemission Study of Energy Band Alignment of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> and Common CMOS Materials

Band Alignment Between Amorphous Ge2Sb2Te5 and Prevalent Complementary-Metal-oxide-semiconductor Materials

Band Alignment Between Gete and Sio2/Metals for Characterization of Junctions in Nonvolatile Resistance Change Elements

Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy

Energy Band Alignment of PbTe/CdTe(111) Interface Determined by Ultraviolet Photoelectron Spectra Using Synchrotron Radiation

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignment at the Interface of Pbte/Snte Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Tetrahedral Amorphous Carbon-Silicon Heterojunction Band Energy Offsets

Band Offsets Between Sio2 And Phase Change Materials In The (Gete)(X)(Sb2te3)(1-X) Pseudobinary System

Si- and Ge-Based Electronic Devices

Dependence of Energy Band Offsets at Ge2sb2te5/Sio2 Interface on Nitrogen Concentration

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

New Materials for Post-Si Computing: Ge and GeSn Devices

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe

Photocurrent Absorption Spectroscopic Study of Si0.6ge0.4/Si Quantum Wells

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces