Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Band Alignment Between Amorphous Ge2Sb2Te5 and Prevalent Complementary-Metal-oxide-semiconductor Materials

Photoemission Study of Energy Band Alignment of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> and Common CMOS Materials

Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials

Band Offsets Between Sio2 And Phase Change Materials In The (Gete)(X)(Sb2te3)(1-X) Pseudobinary System

Band Alignment Between Gete and Sio2/Metals for Characterization of Junctions in Nonvolatile Resistance Change Elements

Band Alignments at Hf1-xZrxO2/Si and Hf0.52Zr0.48O2/Si0.55Ge0.45 Interfaces

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Ab initio molecular dynamics and materials design for embedded phase-change memory

The local structural differences in amorphous Ge-Sb-Te alloys

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

Fermi-level Pinning and Charge Neutrality Level in Nitrogen-Doped Ge2Sb2Te5: Characterization and Application in Phase Change Memory Devices

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Band alignment of metal/amorphous-oxide interface using atomic orbitals projection of plane-wave: a first principle study at the Al/a-SiO2 interface

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Revealing the Structure and Electronic Characteristics of Te-rich Threshold Switching Materials for High-Density Integration

Band Alignment Between Ta2o5 And Metals For Resistive Random Access Memory Electrodes Engineering