Abstract:As one of the emerging memory device, Ta 2 O 5 based RRAM has shown various outstanding features, such as low power consumption, high reliability and excellent scalability. In Ta 2 O 5 RRAM, the formation and the migration of oxygen vacancies are crucial to the resistive switching characteristics, reliability and uniformity of the device. In this paper, we used the first-principle simulation to study the properties of oxygen vacancies including forming energy and migration barrier in amorphous tantalum pentoxide. The β-Ta 2 O 5 supercell was built and annealing algorithm was used for generating amorphous Ta 2 O 5 in Material Studio. The band structure and DOS of both materials were studied by Vienna Ab initio simulation program (VASP). We also calculated the formation energy and migration barrier of oxygen vacancies, and discussed the mechanism of conductive path formation in amorphous Ta 2 O 5 . Finally, we proposed a new microscopic model of resistive switching mechanism in amorphous Ta 2 O 5 RRAM device.

Band Alignment Between Ta2o5 And Metals For Resistive Random Access Memory Electrodes Engineering

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

CuAg/Al 2 O 3 /cuag Threshold Switching Selector for RRAM Applications

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

Investigation of Resistive Switching in Bipolar Taox-Based Resistive Random Access Memory

Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Improved Uniformity of TaOx-Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Electrode/Oxide Interface Engineering By Inserting Single-Layer Graphene: Application For Hfox-Based Resistive Random Access Memory

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures

Unipolar <formula formulatype="inline"><tex Notation="TeX">$\hbox{TaO}_{x}$</tex></formula>-Based Resistive Change Memory Realized With Electrode Engineering