Abstract:Using nonequilibrium Green’s functions in combination with density-functional theory (DFT), we investigated the electronic transport properties of the silicon monatomic chains (SiMCs) with different geometries which were induced by the encapsulation of the carbon nanotubes (CNTs). The encapsulated SiMCs, which were put inside (5,5), (6,6), (7,7) and (8,8) hydrogenated armchair CNTs, were coupled to two Au (100) nanoscale electrodes. The electronic transport property of an isolated finite SiMC was also studied to serve as a reference to our calculations. As the diameter of CNTs increases, the geometry structures of SiMCs changed. Calculated results show that the current–voltage (I–V) characteristics depend sensitively on the geometry structures of SiMCs and can be controlled by the size-selective encapsulation. Negative differential resistance (NDR) phenomena were observed within certain bias voltage ranges. A detailed analysis of the origin of NDR was carried out with the transmission spectrum, the spatial distribution of frontier molecular orbitals and the molecular projected self-consistent Hamiltonian (MPSH) states taken into consideration. These results indicated that the size-selective encapsulation of SiMCs in CNTs can become a possible candidate for designing the silicon-based nanoelectronic devices.

Observation of Negative Differential Resistance in SiO2/Si Heterostructures

Negative Differential Resistance in a Hybrid Silicon-Molecular System: Resonance Between the Intrinsic Surface-States and the Molecular Orbital.

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Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Observation of S-Type Negative Differential Resistance in N-Zno/P-Si Hetero-Junctions

Atomic‐Scale Characterization of Negative Differential Resistance in Ferroelectric Bi 2 WO 6

Negative Differential Resistance in AlGaAs/GaAs Heterostructures

Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

Theoretical study on negative differential resistance in transition metal dichalcogenide planar heterostructures

Observation of real space transfer in GaAs-AlGaAs heterostructure grown by LPE

Negative Differential Resistances Observed in Suspended-Channel Fets

Light-induced Negative Differential Resistance in Gate-Controlled Graphene-Silicon Photodiode

Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe 2 /2H-MoS 2 Heterostructure

Multipeak negative differential resistance effects in nanocrystalline Si stacking MOS structures

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

Negative Differential Resistance Behavior of Silicon Monatomic Chain Encapsulated in Carbon Nanotubes

Probing Negative Differential Resistance on Si(111)-3×3-Ag Surface with Scanning Tunneling Microscopy

Mechanism for Negative Differential Resistance in Molecular Electronic Devices: Local Orbital Symmetry Matching.