Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Light-induced Negative Differential Resistance in Gate-Controlled Graphene-Silicon Photodiode

Diverse Field-Effect Characteristics and Negative Differential Transconductance in a Graphene/ws2/au Phototransistor with a Ge Back Gate.

Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes

Transition of Photoresponsivity in Graphene-Insulator-Silicon Photodetectors

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Three-terminal graphene negative differential resistance devices.

Photoinduced Negative Differential Resistance at a Graphene/Silicon Interface: A Nonadiabatic Quantum Molecular Dynamics Study

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

High Detectivity Graphene-Silicon Heterojunction Photodetector.

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Negative Photoconductance in Van Der Waals Heterostructure-Based Floating Gate Phototransistor

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Half-filled Energy Bands Induced Negative Differential Resistance in Nitrogen-Doped Graphene.

Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors