Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Antonio Di Bartolomeo,Giuseppe Luongo,Filippo Giubileo,Nicola Funicello,Gang Niu,Thomas Schroeder,Marco Lisker,Grzegorz Lupina

DOI: https://doi.org/10.1088/2053-1583/aa6aa0

IF: 6.861

2017-04-19

2D Materials

Abstract:We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as and a normalized detectivity higher than in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I–V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A ** = and an ideality factor , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

materials science, multidisciplinary