A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
Xia Wan,Yang Xu,Hongwei Guo,Khurram Shehzad,Ayaz Ali,Yuan Liu,Jianyi Yang,Daoxin Dai,Cheng-Te Lin,Liwei Liu,Hung-Chieh Cheng,Fengqiu Wang,Xiaomu Wang,Hai Lu,Weida Hu,Xiaodong Pi,Yaping Dan,Jikui Luo,Tawfique Hasan,Xiangfeng Duan,Xinming Li,Jianbin Xu,Deren Yang,Tianling Ren,Bin Yu
DOI: https://doi.org/10.1038/s41699-017-0008-4
IF: 10.516
2017-04-11
npj 2D Materials and Applications
Abstract:We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W−1), fast time response (5 ns), high specific detectivity (1.6 × 1013 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W−1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and “dissipation-less” remote sensor networks.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology