Abstract:Multiple chip stacking technology has provided a cost-effective solution to achieve three-dimensional (3D) heterogeneous integration, which can realize vertical high-density interconnections of chips by means of Cu-filled through silicon vias (TSVs) and Cu-Cu direct bonding. Despite some attempt to use Cu nanoparticle (NP) capped Cu pillar to facilitate Cu-Cu direct bonding without special treatment of Cu surface, there are still challenging issues to be solved. In this work, the surface of single Cu pillar arrays is coated with a patented Cu paste consisting of bimodal Cu nanoparticles (NPs), then the Cu NP paste capped Cu pillars are assembled on Cu substrate, and Cu-Cu direct bonding process is performed by low-temperature and low-pressure sintering in air without special surface treatment of the Cu pillars. The effects of different Cu pillar diameters (200, 500 and 800 mu m) and varying sintering pressure (0.1, 0.5 and 1.0 MPa) on the sintering behavior of Cu-Cu direct bonding structures (joints) are studied. The results show that the Cu-Cu direct bonding joints with small diameter Cu pillar sintered under high sintering pressure show denser microstructure of the sintered Cu paste matrix and have high shear mechanical strength. After shear tests of Cu-Cu direct bonding joints, fractographic morphologies exhibit obvious plastic deformation features, indicating an excellent bonding quality of the joints, and both the proportion of plastic fracture regions on the fracture surface and the degree of plastic deformation increase with the decrease of Cu pillar diameter.

Large-area and Low-Cost Cu–Cu Bonding with Cold Spray Deposition, Oxidation, and Reduction Processes under Low-Temperature Conditions

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Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

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Low Temperature Bonding of Cu Metal through Sintering of AgNanoparticles for High Temperature Electronic Application

Sintering of Mixed CuAg Nanoparticles Pretreated by Formic Acid Vapor for CuCu Low Temperature Bonding