Abstract:Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP.

Semiconductor-metal Transition Induced by Combined Electric Field and External Strain in Bilayer Phosphorene

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

The Phosphorene Under The External Electronic Field And Strain

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Ab Initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field

Mechanical strain and electric field tunable electronic structure of black/violet phosphorene van der Waals heterostructure: From type I to Z-scheme system

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

Modulation of the electronic properties of blue phosphorene/stanene heterostructures by electric field and interlayer distance

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

Strain-controlled thermoelectric properties of phosphorene hetero-bilayers

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Electric Field Modulation of Electronic Structures in InSe and Black Phosphorus Heterostructure

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Achieving indirect-to-direct band gap transition and enhanced photocatalytic performance in blue phosphorene through doping and strain

Electronic phase transition in bilayer P6mmm borophene