Abstract:First-principles based on density functional theory (DFT) are used to calculate the structural and electronic properties of InSe/arsenene heterostructure. The results show that the InSe/arsenene bilayer forms a type-II van der Waals heterostructure with a direct band gap of 0.876 eV, which is favorable for the separation of photo-generated electron-hole pairs. The properties of InSe/arsenene heterojunction can be effectively regulated by applying an external electric field and uniaxial strain. When an external electric field is applied, the heterostructure experiences a transition from semiconductor to metal. In addition, due to the presence of built-in electric field, the positive and negative electric fields have different effects on the electronic properties of heterostructure. When uniaxial strain is applied, the heterostructure can withstand larger tensile strain than compression strain without damaging the structure and the band gap is more easily decreased by X-direction strain. In addition, the heterostructure undergoes a direct-indirect bandgap transition under strain. When compressive strain is applied in the Y direction, especially epsilon < - 2%, the heterostructure possesses a higher carrier mobility while maintaining direct bandgap characteristics. Our results show that the new InSe/arsenene heterostructure has great potential for applications in electronic and optoelectronic devices.

Electric Field Modulation of Electronic Structures in InSe and Black Phosphorus Heterostructure

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Electric Field and Uniaxial Strain Tunable Electronic Properties of the InSb/InSe Heterostructure.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Tuning Electronic Properties of InSe/arsenene Heterostructure by External Electric Field and Uniaxial Strain

Electric Field Analyses on Monolayer Semiconductors: the Example of InSe

Semiconductor-metal Transition Induced by Combined Electric Field and External Strain in Bilayer Phosphorene

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Strain-regulated electronic and optical properties of InSe/WS 2 heterostructure from first-principle calculations

Electronic properties of Borophene/InSe van der Waals heterostructures

Electronic Structure and Optical Properties of InSe/α-AsP Van Der Waals Heterostructure from DFT Calculations

Magnetic Engineering in InSe/black-phosphorus Heterostructure by Transition-Metal-atom Sc-Zn Doping in the Van Der Waals Gap

Strain-regulated electronic and optical properties of InSe/WS<sub>2</sub> heterostructure from first-principle calculations

The Phosphorene Under The External Electronic Field And Strain

Tunable electronic structures in BP/MoSSe van der Waals heterostructures by external electric field and strain

Mechanical strain and electric field tunable electronic structure of black/violet phosphorene van der Waals heterostructure: From type I to Z-scheme system

Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical P–n Heterojunctions

Modulation of the electronic properties of blue phosphorene/stanene heterostructures by electric field and interlayer distance

Electric field-modulated data storage in bilayer InSe