Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Investigation of Air Plasma in Ultra-Short Laser Processing of Crystalline Silicon

Plasma and Ablation Dynamics in Ultrafast Laser Processing of Crystalline Silicon

Plasma Dynamics in Ultra-Short Laser Ablation in Electronic Materials

Observation of Femtosecond Laser-Induced Ablation in Crystalline Silicon

Femtosecond laser induced ablation of crystalline silicon upon double beam irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Ultrafast Dynamics of Femtosecond Laser Irradiation of Silicon with Different Fluence

Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases

Structure-Mediated Excitation of Air Plasma and Silicon Plasma Expansion in Femtosecond Laser Pulses Ablation

Efficiency of silicon micromachining by femtosecond laser pulses in ambient air

Study of the Plasma Plume Generated During Near Ir Femtosecond Laser Irradiation of Silicon Targets

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Formation Mechanisms of Silicon Surface Structuring using Single-Multiple Nanosecond Laser Pulses in Ambient Air and Cold Plasma

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Characteristic Study of Plasma Plume Produced by Nanosecond Pulsed Laser Ablation of Silicon Using Optical Emission Spectroscopy

Ultrafast Laser-Induced Processing of Materials: Fundamentals and Applications in Micromachining

Delayed Phase Explosion During High-Power Nanosecond Laser Ablation of Silicon

Pulsed excimer laser melting of thin silicon films

Ultrafast Process Characterization of Laser-Induced Damage in Fused Silica Using Pump-Probe Shadow Imaging Techniques

Dynamics and its modulation of laser-induced plasma and shockwave in femtosecond double-pulse ablation of silicon

Femtosecond Laser Ablation of Silicon in Air and Vacuum