Study of the Plasma Plume Generated During Near Ir Femtosecond Laser Irradiation of Silicon Targets

S. Amoruso,C. Altucci,R. Bruzzese,C. de Lisio,N. Spinelli,R. Velotta,M. Vitiello,X. Wang
DOI: https://doi.org/10.1007/s00339-004-2785-9
2004-01-01
Abstract:Ti:sapphire femtosecond laser ablation of silicon has been investigated by Langmuir probe and time-gated optical emission spectroscopy. The measured spectra show the presence of a fast ion population preceding the main plume core of slow ions and neutrals produced by a thermal ablation mechanism. By analyzing the fluence thresholds for the emission of the two ion populations, we provide clear experimental evidence that fast ions are ejected non-thermally from the sample surface as a result of the Si surface supercritical state induced by the intense ultrashort laser pulse irradiation.
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