Abstract:Abstract Laser micromachining has attracted considerable interest because of its wide range of applications across nearly all manufacturing sectors and mostly in semiconductors such as silicon. However, modern micro-manufacturing demands progressive product miniaturization, high accuracy, and high-precision material removal. For this purpose, a fundamental study of the interaction between ultrashort laser pulses and silicon will be valuable for studying ablation characteristics and ablation performance. The femtosecond laser pulse interaction with the silicon is divided into five parts: (a) the interaction of laser light with the carriers, (b) variation of the carrier density and carrier temperature, (c) energy exchange between carriers and lattice, (d) thermomechanical response of the material, and (e) ablation. The evolution of the carrier density and carrier-lattice energy coupling equation is solved simultaneously to determine the optimum value of the ablation width and ablation depth of femtosecond laser pulses on the silicon. The first time, 2D axial symmetry thermal and non-thermal ablation profiles were compared with the experimental result at fluence ranging from 0.75 to 9 J cm −2 at the wavelength of 515 nm and 180 fs laser on the silicon sample. A comparative study of damage thresholds from experiments and simulations is presented. The concordance between model calculations and experimental data demonstrates that fs laser ablation is thermal in nature in low fluence regime, whereas it is non- thermal in a high-fluence regime. Fundamental information such as the time evolution of the carrier density, carrier temperature evolution, and lattice temperature evolution can be obtained from the simulation results.

Plasma and Ablation Dynamics in Ultrafast Laser Processing of Crystalline Silicon

Observation of Femtosecond Laser-Induced Ablation in Crystalline Silicon

Plasma Dynamics in Ultra-Short Laser Ablation in Electronic Materials

Investigation of Air Plasma in Ultra-Short Laser Processing of Crystalline Silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Femtosecond laser induced ablation of crystalline silicon upon double beam irradiation

Ultrafast Dynamics of Femtosecond Laser Irradiation of Silicon with Different Fluence

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Ultrafast Laser-Induced Processing of Materials: Fundamentals and Applications in Micromachining

Study of the Plasma Plume Generated During Near Ir Femtosecond Laser Irradiation of Silicon Targets

Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon

Dynamics and its modulation of laser-induced plasma and shockwave in femtosecond double-pulse ablation of silicon

The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases

Study on Ultrafast Imaging of Silicon Surface Ablated by a Single Nanosecond Laser Pulse

Ultra-fast laser-induced recrystallization of amorphous silicon films

Hydrodynamic Simulation of Silicon Ablation by Ultrashort Laser Irradiation

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

Computational and Experimental Study of Nanosecond Laser Ablation of Crystalline Silicon

Study of the Ultrafast Dynamic Process of Intense Femtosecond Laser Ablation of Solid Targets