Abstract:We report the photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser in different environments (deionized water and air) and energy density conditions. The field emission scanning electron microscope (FESEM) measurement results show the formation of completely different morphologies on silicon surface in different environments. A stripe-like microstructure on the silicon surface in air is formed in contrast to the smaller and coral-like microstructure generated in the deionized water. By using the energy dispersive spectroscopy (EDS) we find that silicon and oxygen is the main elemental composition on femtosecond laser-induced silicon surface, and the content of oxygen on the sample surface formed in the deionized water is nearly four times larger than that in air. The Si-Si bond (610 cm-1) and Si-O-Si bond vibrations (1105 cm-1) are detected mainly in the Fourier transform infrared transmission spectrum (FT-IR). The photoluminescence (PL) spectroscopy measurement results show that visible blue luminescence is observed both from the silicon ablated in the deionized water and in air, while the shape and position of the emitted luminescence peak are substantially the same. However, the luminescence intensity of silicon etched in the deionized water is close to 3 times stronger than that in air when the photoluminescence is excited at respective most suitable excitation wavelength. A more interesting phenomenon is that the position and shape of the photoluminescence peak in the visible range are basically not changed. The studies confirm that oxygen plays an important role in photoluminescence enhancement. Photoluminescence may be mainly generated by the formation of oxygen defects SiOx and the content of low oxide SiOx (x<2) determines the luminous intensity level.

Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases

Characteristic Study of Plasma Plume Produced by Nanosecond Pulsed Laser Ablation of Silicon Using Optical Emission Spectroscopy

Study of the Plasma Plume Generated During Near Ir Femtosecond Laser Irradiation of Silicon Targets

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Structure-Mediated Excitation of Air Plasma and Silicon Plasma Expansion in Femtosecond Laser Pulses Ablation

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Plasma emission spectrum of laser-ablated silicon in air

Femtosecond Laser Ablation of Silicon in Air and Vacuum

Temporal and Spatial Evolution of Si Atoms in Plasmas Produced by a Nanosecond Laser Ablating Silicon Carbide Crystals

Plasma and Ablation Dynamics in Ultrafast Laser Processing of Crystalline Silicon

Effects of plasma confinement on the femtosecond laser ablation of silicon

Investigation of Air Plasma in Ultra-Short Laser Processing of Crystalline Silicon

Emission of Nanoparticles During Ultrashort Laser Irradiation of Silicon Targets

Dynamics of Femtosecond Laser-Produced Plasma Ions

Dynamics and its modulation of laser-induced plasma and shockwave in femtosecond double-pulse ablation of silicon

Plasma Dynamics in Ultra-Short Laser Ablation in Electronic Materials

Enhancing the Expansion of a Plasma Shockwave by Crater-Induced Laser Refocusing in Femtosecond Laser Ablation of Fused Silica

Observation of Femtosecond Laser-Induced Ablation in Crystalline Silicon

Photoluminescence of Monocrystalline Silicon Irradiated by Femtosecond Pulsed Laser

Ultrafast Dynamics of Femtosecond Laser Irradiation of Silicon with Different Fluence

Optical Emission Spectra of Si Plasma Induced by Femtosecond Laser Pulse