Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta₂O₅ RRAM

Chengxuan Cai,Shengsheng Wei,Zhipeng Yin,Jiao Bai,Weiwei Xie,Yue Li,Fuwen Qin,Yan Su,Dejun Wang

DOI: https://doi.org/10.1016/j.apsusc.2021.149960

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:The physical mechanism of the effect of Si dopant on the formation of oxygen vacancy (V-O) and the uniformity of conductive filaments (CFs) are explored in Ta2O5-based resistive random access memory (Ta2O5-RRAM). On the basis of first-principle calculations, we investigated the effect of Si dopant on the electronic structure of Ta2O5, including the formation energy of V-O, Bader charge, density of states (DOS), and interaction of Si dopant with V-O. Results of formation energy and Bader charge reveal that Si dopant is favorable to the formation of V-O. Results of DOS reveal that Si dopant can improve the conductivity of Ta2O5. The interaction of Si dopant with V-O can enhance the uniformity of CFs. Si dopant is favorable in reducing the formation energy of V-O and improving the switching uniformity of Ta2O5-RRAM devices.