Electrochemical Deposition and EPIR Effects of Cu_2O Film

LUO Chang-jun,KAN Zhi-lan,YANG Chang-ping,LIU Guo-zhen,WANG Rui-long

DOI: https://doi.org/10.3969/j.issn.1673-1670.2013.02.016

2013-01-01

Abstract:The cuprous oxide(Cu2O) films and Cu/Cu2O/Cu/FTO devices were electrochemically deposited on FTO substrates with different pH values and constant deposition potentials.The phase compositions,crystal structure,microstructure and chemical components of Cu2O films were characterized and analyzed by XRD,SEM and EDS methods.The Electric-Pulse-Induced-Resistance(EPIR)switching effect of Cu/Cu2O/Cu/FTO devices was examined as well.The results show that EPIR effect and resistive memory characteristic exist clearly in Cu/Cu2O/Cu/FTO device at room temperature and relate to the pH values of the solution.In the acidic and neutral condition,for example pH=5,6,7,EPIR effect exists clearly in Cu/Cu2O/Cu/FTO devices and tends to decrease as the pH value rises.Moreover,the most significant EPIR effect appears as the optimal pulse parameters are 6 V for the pulse amplitude and 0.001 s for the pulse width.As the pH value rises further in alkaline condition,for example pH=8,9,10,EPIR effect disappears.