Preparation and resistive switching properties of solid electrolyte Cu2S films

Jiu-Ru Zhang,Jiang Yin

DOI: https://doi.org/10.3321/j.issn:0469-5097.2009.02.018

2009-01-01

Abstract:Solid electrolyte Cu2S films were prepared by using pulsed laser deposition technique on Pt/TiO2/SiO2/Si(111)and highly conductive Si(111)substrates at room temperature.The crystal structure and surface morphology of Cu2S films were characterized by using X-ray diffraction(XRD)and atomic force microscopy(AFM).The Cu2S films prepared on Pt/TiO2/SiO2/Si(111)substrates and annealed at 400 ℃ were crystallized along <001>-direction preferably,while the preferable growth of the crystal grains in the Cu2S films prepared on the highly conductive Si(111)substrates was not observed.The memory units Cu/Cu2S/Pt and Cu/Cu2S/Si(111)were prepared by using fused ion beam and pulsed laser deposition technique.All of these memory units show the good resistive switching properties,and the large difference in the resistance between the 'on' and 'off' states for the memory units fabricated in the different substrates were observed,which were ascribed to the different interface between the non-reactive metal electrode and Cu2S films.