Abstract:We examined the etch characteristics of SiO2 contact holes which have the sizes of 0.3–1.2 μm in a C4F8+H2 electron cyclotron resonance plasma etching system. We varied the chamber pressure (3–7.5 mTorr), microwave power (300–800 W), gas mixing ratio, bias voltage (100–300 V) and bias frequency (100 –800 kHz) as the experimental parameters to investigate the reactive ion etching (RIE) lag. The RIE lag improved, as the bias voltage increased and this RIE lag improvement was thought to be due to the increase of ion energy incident on the substrate. The RIE lag also improved as the chamber pressure decreased and this improvement is due to the increase of ion current density as the chamber pressure decreases. When we increased the bias frequency from 100 to 800 kHz maintaining the same bias voltage, the RIE lag improved considerably. We calculated energy distribution of ions striking the rf biased substrate using Monte Carlo particle-in-cell method to understand this phenomenon. The ion energy distributions are bimodal when the bias frequencies are below 1 MHz, but as the bias frequency increases from 100 kHz to 1 MHz, the low energy part decreases and the high energy part increases, and it is suggested that this change of ion energy distribution is responsible for the RIE lag improvement with the bias frequency increase.

INFLUENCE OF RF SUBSTRATE BIAS ON SiO2 FILMS PREPARED BY ECR-PECVD

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Influence of Substrate Bias on Properties of TiN Films with X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Studies

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

Preparation and Characterization of Copper Oxide Thin Films Deposited by Filtered Cathodic Vacuum Arc

Influence of Different Substrates on MgTiO_3-CaTiO_3 Thin Films Prepared by RF Sputtering

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Influence of Dc Bias Voltage on the Refractive-Index and Stress of Carbon-Diamond Films Deposited from A Ch4/Ar Rf Plasma

Effects of Bias Voltage and Substrate Temperature on the Mechanical Properties and Oxidation Behavior of CrWSiN Films

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Influence of radio frequency magnetron sputtering parameters on the structure and performance of SiC films

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Low-temperature Deposition of Large-Grain Polycrystalline Si Thin Films on Polyethylene Terephthalate

Effects of substrate bias and temperature during Titanium sputter-deposition on the phase formation in TiSi2

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system

Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

Effect of Substrate Bias on the Structure and Properties of Multi-Element (alcrtatizr)n Coatings