Influence of Substrate Bias on Properties of TiN Films with X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Studies

江宁,沈耀根,张寒洁,鲍世宁

DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.06.017

2004-01-01

Abstract:TiN films were grown on Si (100) substrate, biased with a voltage ranging from 0 to -500 V, by reactive under-balanced DC magnetron sputtering. The film was studied with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) study. The results show that the substrate bias voltage significantly affects its mechanical properties. For instance, grown at a bias of -100 V, the films display the highest hardness and elastic modulus. Plotting the film RMS surface roughness and the bias voltage, we have a curve goes down, reaching a bottom at -100 V and goes up afterwards from -100 V to -500 V. Similar nonlinear variations in Ti2p and N1s core level spectra were also recorded before and after Ar ion sputtering. We may conclude that bias voltage alters the chemical compositions and chemical states during film growth. XPS results show that appropriate substrate bias favors the bonding of TiN and that formation of stable chemical structure further makes many surface phenomena, including surface diffusion, surface oxidation, impurity segregation and defect formation, more difficult to occur. We suggest that good mechanical properties originate from improvement in surface flatness.