Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface

Qi YUAN,Limei CHA,Wenquan MING,Xiubo YANG,Shiyong LI,Junfeng HAN
DOI: https://doi.org/10.11896/j.issn.1005-023X.2018.11.003
2018-01-01
Abstract:CuInxGa1-xSe2(CIGS)films were deposited on soda-lime glass by magnetron sputtering and selenization heat treat-ments.X-ray diffraction (XRD),high resolution transmission microscopy (HR-TEM),high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS)mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface.It was found that CIGS/Mo interface was clear when the selenization temperature was 400 ℃.A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500 ℃.The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600 ℃,therefore the CIGS/Mo interface developed into a multi-layered structure of CIGS/Na-riched second phase/MoSe2/Mo.In addition,the orientations of MoSe2 grains may effect on the forma-tion of second phases.
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