Influence of Carrier Gas on Microstructures and Morphologies of Cu(In_(1-x)Ga_x)Se_2 Films
Han Donglin,Zhang Gong,Zhuang Daming,Yuan Jinshi,Li Chunlei
DOI: https://doi.org/10.13922/j.cnki.cjovst.2008.03.013
2008-01-01
Abstract:Cu(In1-xGax)Se2 films(CIGS) absorbers were grown by selenizing the CuInGa(CIG) precursors,deposited by mid frequency AC sputtering of CuIn and CuGa targets,sequentially,on Mo-coated glass substrates in an atmosphere of Se vapor and the carrier gas of either N2 or Ar.The CIGS films were characterized with X-ray diffraction(XRD),scanning electron microscopy(SEM),energy dispersive spectroscopy(EDS).The results show that the type and flow rate of the carier gas considerably affect the microstrcutures and morphologies of the CIGS films.For example,at various carrier gas flow rates,the CIGS films show a chalcopyrite phase with(112) as the preferred growth orientation.The most compact surfaces,with minimum surface pore density,can be obtained at an argon flow rate of 0.10 m3/h.As the Ar flow rate increases,the film becomes less compact with increased surface pore densities.In contrast,as the nitrogen flow rate increases from 0.10 m3/h,the film looks rather rough with high surface pore densities;however,at a rate of 0.40 m3/h,the films become fairly compact.We suggest that the optimized N2 flow rate is 0.40 m3/h in growing the weakly p-typed CIGS films with good stoichiometires of Cu,In,and Ga.