Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

The Growth and Morphology Characterization of GaN Micro-pyramid Structure

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

Morphology and Characterization of GaN Crystals Grown by Na Flux Method under 7 MPa Nitrogen Pressure

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Macro-Pyramid in Gan Film

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111) Template

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy