Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage

LI Lian-he,PAN Zhong,ZHANG Wei,LIN Yao-wang,WANG Xue-yu,WU Rong-han

DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.01.005

2001-01-01

Chinese Journal of Semiconductors

Abstract:The effects of ion damage on GaNAs/GaAs and GaInNAs/GaAs quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy have been investigated.It is found that ion damage is a key factor affecting the quality of GaNAs and GaInNAs QWs.Obvious appearance of pendello¨sung fringes in X-ray diffraction pattern and remarkable improvement in the optical properties of the samples grown with ion removal magnets are observed.By removing nitrogen ions,the PL intensity of the GaInNAs QW is improved so as to be comparable with that of GaInAs QW.The stronger is the magnetic field,the more obvious the PL intensity improvement would be.