Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod Ingan/Gan Multiple Quantum Wells

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

The quantum efficiency study of GaN nanorods

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Effect of Dry Etching on Light Emission of InAsP/InP SMQWs

Performance Improvement of Ultraviolet-a Multiple Quantum Wells Using a Vertical Oriented Nanoporous GaN Underlayer.

Study on the Optical Properties of GaN-Based Multiple Quantum Well Embedded in Nanostructures

Effect of Ion-Induced Damage on Ganas/Gaas Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Enhanced Resonant Energy Transfer by Decorating Au Nanoparticles on the Sidewalls of InGaN Multiple‐Quantum‐Well Nanorods

The Effects of Nanocavity and Photonic Crystal in InGaN/GaN Nanorod LED Arrays

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded