Abstract:The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar 101 ̄1-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Effect of V-defects on the Performance Deterioration of InGaN/GaN Multiple-Quantum-well Light-Emitting Diodes with Varying Barrier Layer Thickness

Defect Influence on Luminescence Efficiency of GaN-based LEDs

Defect-Reduced Green Gainn/Gan Light-Emitting Diode On Nanopatterned Sapphire

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

Carriers Capturing of V-Defect and Its Effect on Leakage Current and Electroluminescence in Ingan-Based Light-Emitting Diodes

Defect-induced color-tunable monolithic GaN-based light-emitting diodes

Microstructure characterization and sidewall treatment of GaN/InGaN micro-light-emitting diodes

Growth and Device Characteristics of Nano-Folding Ingan/Gan Multiple Quantum Well Led