Abstract:Owing to its high luminous efficiency, chemical stabili ty and long lifetime, GaN based InGaN/GaN multiquantum wells (MQWs) LEDs is widely used in solidstate lighting and backlight of liquid crystal display. Recentl y, due to the rising demand of wearable and portable techno logy, the LEDs device size is required to be smaller. Compa red with traditional LEDs, the size of a single pixel of micr oLEDs can be decreased to tens of microns and each pixel ca n be controlled or driven independently, which have achiev ed much advantages in high resolution display and visiblelight communication (VLC). As to further improve the resol ution, the next trend is to shrink the size of LED pixe ls into several hundred nanometers, which is called na no-LEDs, or NLED for the next generation display. Here, we have investigated the fabrication of InGa N/GaN MQW nano-sized LEDs through bottom-up and top-down methods. Firstly, a series of highly ordered c-plane InGaN/GaN nanorod (NR) arrays were fabricate d by our developed soft UV-curing nanoimprint lithogr aphy on a wafer, as shown in Figure 1. Then, InGaN/ GaN nanorod LEDs were fabricated by an inductively coupled plasma(ICP) process. The radiative recombinati on in NLED samples is found to be greatly enhanced due to not only the suppressed non-radiative recombina tion but also the strain relaxation and optical waveguid e effects. Blue and green NLEDs have been finally rea lized, with good current–voltage performance and unifo rm luminescence. Secondly, InGaN/GaN multiple quant um well (MQW) nanowire ensembles grown on Si (11 1) substrates by plasma-assisted molecular beam epitax y (PA-MBE) are investigated. Well-oriented InGaN/GaN nanowires with perfect wurtzite crystal structure can b e achieved by optimizing the growth parameter of bott om GaN nanowires. As to realize electrical injected emission, InGaN/G aN single nanorod light-emitting diodes (NLEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current –voltage characteristics of single NLEDs show low lea kage current of 2 × 10 A at a reverse bias of −5 V and turn-ON voltage of ∼3.8 V. Linear polarization-or iented parallel to the c-axis with a degree of ∼50% w as discovered from the electroluminescence emission of single NLEDs[Figure 2]. Fig. 1. Schematic of our nanoimprint fabrication technology and SEM images of Nano-LEDs.

Growth and Device Characteristics of Nano-Folding Ingan/Gan Multiple Quantum Well Led

InGaN/GaN multi-quantum-well nanowires and light emitting

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

46.4: Fabrication of InGaN/GaN‐based Nano‐leds for Display Applications

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Performance Improvement of Ingan/Gan Light-Emitting Diodes with Triangular-Shaped Multiple Quantum Wells

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Optically and Electrically Invariant Multi-color Single InGaN/GaN Nanowire Light-emitting Diodes on Silicon Substrate under Mechanical Compression

Single nanowire green InGaN/GaN light emitting diodes.

Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Enhancing Light Coupling And Emission Efficiencies Of Algan Thin Film And Algan/Gan Multiple Quantum Wells With Periodicity-Wavelength Matched Nanostructure Array