Abstract:Heterostructured colloidal nanocrystals, such as core/shells and dot-in-rods, enable new spectral and dynamic properties otherwise unachievable with single-component nanocrystals or quantum dots (QDs). For example, the electron and hole wavefunctions can be engineered such that they are either both confined in the same domain or (partially) separated over different domains in the heterostructures, which are the so-called type I or (quasi-) type II localization regimes, respectively. A critical factor dictating the carrier localization regime is the band alignment or electronic structure of the heterostructure, which, however, is difficult to measure and hence is often ambiguous. In this work, using CdSe@CdS dot-in-rods (DIRs) as a model system, we show that band edge carrier-doping is a simple-yet-powerful tool to probe the electronic structure of heterostructures. By doping an electron into the CdSe core and then observing whether the doped electron bleaches band edge absorption of only the core or those of both the core and shell, we can easily differentiate the type I and quasi-type II structures. A systematic study of DIRs with various dimensions shows that the extent of electron wavefunction delocalization can be tuned by the core sizes and rod diameters. Comparison with the electronic structure determined from transient absorption measurements also reveals the important role of electron-hole binding in affecting the delocalization of electron wavefunction. In addition to probing the electronic structure, the doped electron allows for studying multi-carrier recombination dynamics in these heterostructures which plays a vital role in their many optical and optoelectronic applications. Specifically, by comparing the band edge exciton recombination kinetics of the doped and neutral DIRs, we can extract the negative trion lifetime, which can be further used to derive the positive trion lifetime when combined with biexciton lifetime measurements. These lifetimes also depend sensitively on the core sizes and rod diameters of the DIRs.

Study on the Carrier Concentration in N-Gaas Homojunction Multilayer Structures by Reflection Spectroscopy

Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

Carrier Concentration in Selectively Doped N-Algaas/gaas Single Heterojunctions

Luminescent Properties Of Nitrogen Doped Gap Semiconductor Studied With Photothermal Deflection Spectroscopy

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas

Optical Properties of p-Type GaAs in Far-Infrared Region

Carrier concentration resolved

Effect of Carrier Concentration on the Reflectivity Spectrum of Ge and InSb

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Effect of Carrier Confinement on Photoluminescence from Modulation-Doped AlxGa1−xN/GaN Heterostructures

Carrier transport and luminescence properties of n-type GaN

Study of Rapid Carrier Capture and Relaxation in Inas/gaas Heterostructures

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Carrier-doping as a tool to probe the electronic structure and multi-carrier recombination dynamics in heterostructured colloidal nanocrystals

Raman Scattering Reveals Strong Lo-Phonon-Hole-Plasmon Coupling in Nominally Undoped Gaasbi: Optical Determination of Carrier Concentration

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Carrier-induced Lower Energy Side Shift of the Absorption Edge in Undoped GaAs Films

Unusual hot carrier effect and improved carrier extraction observed in asymmetric dilute-nitride quantum-engineered solar cells through photoluminescence (PL) and external quantum efficiency (EQE) measurements